Planar Channeling of 855 MeV Electrons in Silicon: Monte-Carlo Simulations

摘要

A new Monte Carlo code for the simulation of the channeling ofultrarelativistic charged projectiles in single crystals is presented. Adetailed description of the underlying physical model and the computationalgorithm is given. First results obtained with the code for the channeling of855 MeV electrons in Silicon crystal are presented. The dechanneling lengthsfor (100), (110) and (111) crystallographic planes are estimated. In order toverify the code, the dependence of the intensity of the channeling radiation onthe crystal dimension along the beam direction is calculated. A good agreementof the obtained results with recent experimental data is observed.